Local Organizing Committee
نویسنده
چکیده
This paper reports on swift heavy ion beam induced epitaxial crystallization of a buried Si3N4 layer. Transmission electron microscopy and selected area diffraction patterns have been used to study the epitaxial growth of the buried Si3N4 layer. We observe good epitaxial crystallization at 150 C and 200 C, respectively for 70 MeV Si and 100 MeV Ag ions at an ion fluence of 1 × 10 ions cm. The fact that recrystallization is achieved at a lower temperature for Si ions is attributed to the higher ratio (one order of magnitude) of the electronic and nuclear energy loss values compared to that of Ag ions. The possible role of the electronic and nuclear energy loss processes in the mechanism of recrystallization have also been discussed. _______________________ Presenting author; Address for correspondence:. Tel.: +91-674-2301058; Fax: +91-674-2300142. E-mail: [email protected] Present address: The ICFAI Institute of Science and Technology, Dehradun – 248 006, India O-9
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Local Organizing Committee
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